http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003273397-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4af0df9a26ff4aafde7285cbd8eb12f4 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate | 2002-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc22f80f2706e798b649a4815b4a1759 |
publicationDate | 2003-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2003273397-A |
titleOfInvention | Semiconductor light emitting device, semiconductor composite device, and method of manufacturing semiconductor light emitting device |
abstract | [PROBLEMS] To provide a simple, low-cost, high-performance semiconductor light-emitting device and a method for manufacturing the same. It is another object of the present invention to provide a semiconductor light-emitting element and a semiconductor composite element in which semiconductor elements having different functions are formed on the same heterogeneous semiconductor layer (semiconductor substrate) to realize a composite element having a high-performance and simple configuration. SOLUTION: A nitride semiconductor layer 21 containing at least one or more elements selected from Group IIIA elements and one or more elements selected from Group VA elements, and a nitride semiconductor layer having different polarities and different types. Having a semiconductor 25 and a light emitting layer 24 provided between a heterogeneous semiconductor and a nitride semiconductor; A semiconductor light emitting device 26, a semiconductor composite device, and a method of manufacturing a semiconductor light emitting device, characterized in that electrons or holes are injected into a light emitting layer from different semiconductors of a different kind of semiconductor and a nitride semiconductor layer to emit light. . |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008306113-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006164938-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011521462-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005116709-A |
priorityDate | 2002-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.