| abstract |
PROBLEM TO BE SOLVED: To provide a composition suitable for producing an antireflection film which is developed simultaneously with a photoresist film in a development step after exposure in a photolithography step, and a method for forming a pattern of a semiconductor device using the same. I do. SOLUTION: A polymer having a (meth) acrylate repeating unit, a diazoquinone-based light absorbing group chemically bonded to the repeating unit, a photoacid generator, and heat are used to crosslink the polymer, A composition for forming an anti-reflection light-absorbing film, comprising: a cross-linking agent which is de-cross-linked from a cross-linked polymer; and a catalyst for accelerating a cross-linking reaction of the polymer. In the method of forming a pattern of a semiconductor device according to the present invention, an antireflection film is formed on a semiconductor substrate using the composition. The anti-reflection film is exposed together with the photoresist film to change into a developable structure, and then developed simultaneously with the photoresist film. |