http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003268555-A

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filingDate 2002-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77830344a6adec1675ca6510505ef46e
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publicationDate 2003-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003268555-A
titleOfInvention Thin film forming apparatus and thin film forming method
abstract (57) [Problem] To provide a thin film forming apparatus and a thin film forming method capable of forming a uniform thin film without unevenness or streaks on a base material even if the base material has a large area. SOLUTION: A reactive gas is turned into a plasma state by applying a voltage between electrodes 20 and 30 facing each other under an atmospheric pressure or a pressure close to the atmospheric pressure to make a reactive gas into a plasma state. In a device 50 for forming a thin film on the surface of the base material F by exposing the base material F disposed between 0 and 30 to the reactive gas in the plasma state, a raw material for forming a thin film is formed between the electrodes 20 and 30. An introduction system 12 configured to be able to introduce the reactive gas, and an exhaust system 13a that exhausts the reactive gas, 13b, the electrodes 20 and 30 disposed opposite to each other, and the electric field intensity between the electrodes 20 and 30 is reduced by the reactive gas introduction system 12. From the side toward the exhaust systems 13a and 13b.
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