http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003258242-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2807 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acbc06791c958fd50ca7236f6ab60a80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c18f0dfd026460c94beb13ba01d8832 |
| publicationDate | 2003-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003258242-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | (57) Abstract: A gate insulating film is formed using a high dielectric material, and its interface state density is kept low. SOLUTION: Before formation of a gate electrode 5, nitrogen is added to the interface side of the aluminum oxide layer serving as the gate insulating film 4 with the semiconductor substrate 1 or the interface side with the gate electrode 5, and an internal region from the interface is formed. A nitrided gate insulating film 4 is formed. Then, a polysilicon layer or a polysilicon germanium layer is formed on the gate insulating film 4 having the nitrided portion, and the gate electrode 5 is formed. Thereby, the interface state density at the interface between the gate insulating film 4 and the semiconductor substrate 1 decreases. In addition, in the annealing process for forming the gate electrode 5, the source 2a, and the drain 2b, penetration of boron is prevented, and the interface state density is kept low. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037728-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011151144-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008516459-A |
| priorityDate | 2002-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.