| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 |
| filingDate |
2002-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6fca9f5f904c0f5e4525d8726c7e49e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da141b07e6f12d94c5578ede950572aa |
| publicationDate |
2003-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003258096-A |
| titleOfInvention |
Wiring structure and method of forming the same |
| abstract |
(57) [Summary] (Problem corrected) [PROBLEMS] To form a wiring using an easily diffusible conductive material on an insulating film represented by Cu by using a damascene method, while suppressing a wiring delay and forming a wiring. An effective dielectric constant of an insulating film to be filled is significantly reduced to realize a highly reliable wiring structure corresponding to recent miniaturization of a semiconductor element. SOLUTION: Via holes 2 and wiring grooves 3 are formed by a damascene method. After forming the wiring 4 to be filled with Cu via the base film 6 to fill with Si, when forming the SiC: H film 5 so as to cover the upper surface of the wiring 4, the film density of the SiC: H film 5 is 2.1. (G / cm 3 ) or more so that the N atom content is increased from 8 (atm%) to 20 (atm %). |
| priorityDate |
2002-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |