| abstract |
PROBLEM TO BE SOLVED: To prevent a grain boundary from being formed in a channel formation region of a TFT, and to significantly reduce the mobility of the TFT, reduce an on-current, and increase an off-current due to the grain boundary. It is an object of the present invention to provide a semiconductor device formed by using a laser crystallization method that can prevent the semiconductor device from being damaged and a semiconductor device production system. SOLUTION: An insulating film having irregularities is formed on a substrate, By forming a semiconductor film over the insulating film, a portion where stress is intensively applied to the semiconductor film during crystallization by laser light is selectively formed. Specifically, stripe-shaped (striped) or rectangular unevenness is provided in the semiconductor film. Then, continuous oscillation laser light is applied along the unevenness of the stripe formed in the semiconductor film or along the direction of the long axis or the short axis of the rectangle. |