http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003255541-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F232-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201abdae12f920f7b848ecd29a09137f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1826cb53e8e5226054260a30aabfebb1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011a1a34e0710f341a81c9dd1d273ea7 |
| publicationDate | 2003-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003255541-A |
| titleOfInvention | Positive resist composition |
| abstract | (57) [PROBLEMS] To show sufficient transmission with respect to 160 nm or less, specifically F 2 excimer laser light (157 nm), A positive resist composition having excellent line edge roughness and development defect performance is provided. SOLUTION: (A) A compound that generates an acid upon irradiation with actinic rays or radiation, (B1) It has a specific repeating structural unit, is alkali-soluble or decomposes by the action of an acid to increase the solubility in an alkali developer. (B2) A positive resist composition containing an organic fluoropolymer having a specific repeating structural unit, (B2) an organic fluoropolymer that decomposes by the action of an acid and increases the solubility in an alkali developer, and (C) a solvent. |
| priorityDate | 2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 169.