| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86ff778280a8f314c5732fead5868411 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate |
2002-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e2638e2b3a407a6546282e464b0d35 |
| publicationDate |
2003-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003249684-A |
| titleOfInvention |
Growth substrate for nitride semiconductor, nitride semiconductor light emitting device, and method of manufacturing the same |
| abstract |
(57) [Summary]nPROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxy with few crystal defects. Growth substrate for nitride semiconductors capable of growing Nitride Semiconductor Light Emitting Device Using Plate and Light Emitting Device To provide a method for manufacturing the same.nSOLUTION: A general formula (La) having a (111) plane as a main surface. a Sr 1-a ) (Al b Ta 1-b ) O 3 (0 <a <1, A single crystal of a composite oxide represented by 0 <b <1). Nitride film or Si film formed by nitriding the main surface A nitride semiconductor growth substrate having a C film is used. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103296158-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103296066-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012106907-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103296157-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105977138-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008034510-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105977138-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017008369-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019218729-A1 |
| priorityDate |
2002-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |