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filingDate 2002-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003243304-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Problem] To provide a method for manufacturing a semiconductor device using a laser crystallization method or a laser irradiation method which can increase the efficiency of substrate processing. SOLUTION: An island-shaped semiconductor film (sub-island) including one or more islands is formed by patterning. Next, the crystallinity of the sub-island is increased by irradiation with a laser beam, and then the sub-island is patterned to form an island. Further, a scanning path of the laser light on the substrate is determined from the pattern information of the sub-island so that at least the sub-island is irradiated with the laser light. That is, in the present invention, the entire substrate is not irradiated with the laser beam, but the laser beam is scanned so that at least an indispensable portion can be crystallized at least.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005244197-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006332551-A
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