| abstract |
(57) Abstract: To improve the crystallinity of a nitride semiconductor film while suppressing the occurrence of cracks when a substrate having a smaller coefficient of thermal expansion than a nitride semiconductor film, such as a Si substrate, is used. To provide a nitride-based semiconductor light-emitting device having a long life and high luminance. SOLUTION: The semiconductor light emitting device of the present invention has a general formula In x Ga y Al z N (provided that, x + y + z = 1,0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1), and has a second intermediate layer 4 between the GaN layer 3 and the light emitting layer 6; Intermediate layer 4 is GaN It is characterized by having a lattice constant closer to the lattice constant of the light emitting layer 6 than the lattice constant of the layer 3. |