| abstract |
PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor thin film having a flat interface and an upper surface, and to provide a semiconductor element exhibiting excellent characteristics by using the method. SOLUTION: An SiC bulk substrate 11 having an upper surface flattened is placed in a vertical thin film growth apparatus and heated in an inert gas atmosphere. Next, the substrate temperature is increased from 1200 ° C to 1600 ° C. A Si source gas is supplied at a flow rate of 1 mL / ° C during the temperature. Next, at a temperature of 1600 ° C., the diluent gas is changed to hydrogen gas, a raw material gas of Si and carbon is supplied, and nitrogen is intermittently supplied, so that the SiC thin film is stacked on the SiC bulk substrate 11. As a result, it is possible to form a laminated structure of the δ-doped layer having a flattened average of the step heights of the upper surface and the internal interface of 30 nm or less. Can be realized. |