http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003229379-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
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filingDate 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146d67a1a66fc491fc436983d8caa722
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publicationDate 2003-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003229379-A
titleOfInvention Metal film manufacturing method and metal film manufacturing apparatus
abstract (57) [Problem] To form a barrier metal film 23 in a very thin state while preventing diffusion of metal and maintaining adhesion to metal. SOLUTION: A surface treatment for removing N atoms in a surface TaN layer to relatively reduce the nitrogen content of the surface layer as compared with the inside of the base material of the barrier metal film 23 is performed, and the metal layer 23a is substantially formed on the surface layer. Is formed, and a substantial metal layer 23a and a metal nitride layer 23b are formed in a single layer thickness, and a barrier metal film 23 is formed in an extremely thin state while preventing metal diffusion and maintaining adhesion to the metal. And stabilize the metal wiring process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8409961-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015506097-A
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