http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003218070-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b19eaa8e535da4e4bceed99917a68153 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2002-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_545ab069a1d0b17807b024864a9ba908 |
| publicationDate | 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003218070-A |
| titleOfInvention | Polishing composition |
| abstract | (57) [PROBLEMS] To provide a highly selective polishing composition in which a polishing rate of copper is high but a polishing rate of tantalum compound is low in a CMP processing process of a semiconductor device having a copper film and a tantalum compound. Provided is a polishing composition for CMP processing, which is excellent in the smoothness of a copper film surface. SOLUTION: The abrasive comprises (A) an abrasive, (B) quinoxaline carboxylic acid and / or quinazoline carboxylic acid, (C) an organic acid, (D) hydrogen peroxide, and (D) water, and the abrasive has an average particle size. A polishing composition comprising an organic polymer compound in the range of 5 to 100 nm, wherein the concentration of the abrasive in the polishing composition is 1 to 30% by weight. |
| priorityDate | 2002-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.