http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003218058-A

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filingDate 2002-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06
publicationDate 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003218058-A
titleOfInvention Laser irradiation method and method for manufacturing semiconductor device
abstract (57) Abstract: In a manufacturing process of a semiconductor device, when a CW laser is irradiated on a semiconductor film while relatively scanning the semiconductor film, a number of long crystal grains extending in the scanning direction are formed. The semiconductor film thus formed has characteristics substantially similar to a single crystal in the scanning direction. However, Due to the high coherence of the CW laser, it is difficult to perform uniform laser irradiation. By setting the angle of incidence of a laser beam on the surface of a semiconductor film in a desired range other than 0 °, interference of the laser beam can be suppressed. In general, the output of a CW laser is small, so that it is necessary to reciprocate the laser beam in order to irradiate it with a large area. However, since the incident angle is not 0 °, a difference occurs in the effect of laser irradiation between the forward path and the return path. To suppress this, The incident angle was made variable, and the conditions for laser irradiation on the outward path and the return path were the same.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7847214-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7688492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005101487-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085317-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006032928-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012164829-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005101548-A
priorityDate 2001-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.