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filingDate 2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fc686e2114d0f0082f42b565bf7d9ad
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publicationDate 2003-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003204257-A
titleOfInvention Semiconductor device
abstract (57) [Problem] To provide a semiconductor device functioning as a neuron element, a potential generator, a logic conversion circuit, and the like. In a potential generator, a source of an N-type MIS transistor and a source of a P-type MIS transistor are connected to each other and to an output terminal. The drain of the N-type MIS transistor 54 is connected to the power supply voltage supply 53 for supplying the power supply voltage VDD, and the drain of the P-type MIS transistor 56 is connected to the ground 57 for supplying the ground voltage VSS. The substrate potential of the N-type MIS transistor 54 is the ground voltage VSS, and the substrate potential of the P-type MIS transistor 56 is the power supply voltage VDD. In this way, it is configured as a source follower circuit that extracts an output from the source. Using this potential generator, a logic conversion circuit that stably switches between the NOR operation and the NAND operation can be obtained.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013009311-A
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priorityDate 2001-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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