| abstract |
[PROBLEMS] To provide a method for forming an insulating film having a low N—H bond content. SOLUTION: A chamber 1 contains hexamethyldisilazane gas, ammonia gas, and argon gas in a vacuum atmosphere. 2 and the thickness of the SiCN film on the surface of the wafer W 1 to A thin film of about 10 nm is formed. Next, the pressure is further reduced while the argon gas is supplied, and the wafer W is heated. By this annealing treatment, N—H bonds in the thin film are excited, and H is removed from the film by dissociation. This thin film forming process and annealing process are repeated to form a SiCN-based film having a predetermined thickness. |