| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-025 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2001-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9baa64254ff7d9f60c1af53085256ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00435579d47981bc90265a5c0f13544c |
| publicationDate |
2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003152117-A |
| titleOfInvention |
Nonvolatile semiconductor memory device |
| abstract |
PROBLEM TO BE SOLVED: To provide a through-current path when reading or writing two memory transistor cells simultaneously in an NROM type memory array in which adjacent memory units MU share a diffusion bit line therebetween. The present invention provides an NR that prevents the generation of such a through current path. An object of the present invention is to provide an OM type memory array. SOLUTION: An NROM type memory array is divided into memory blocks, and a separation section for electrically insulating each memory block is provided in a boundary area of each memory block so that the number of data to be simultaneously read or written can be reduced. If there is only one in the memory block, it is possible to prevent generation of a through current path when data is read or written. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4632713-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006040442-A |
| priorityDate |
2001-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |