| abstract |
(57) Abstract: A bump is formed by bonding a ball to a pad portion of an IC with high reliability without requiring external heating. SOLUTION: A ball serving as a bump is formed at the tip of a gold wire 1 derived from a capillary 2 and ultrasonic vibration is applied by an ultrasonic head 7 via a capillary 2 while pressing the ball against a pad portion of an IC 3. To join the metal, In a bump bonding technique for forming a C3 bump, 130 to 320 kHz at room temperature and normal pressure, preferably 17 to By applying ultrasonic vibration of 0 to 270 kHz, optimally 230 ± 10 kHz, metal bonding is performed, and a good bonding state bump can be formed even for IC3 having a low heat-resistant temperature, and heat influence on the surroundings. The bump can be formed with high positional accuracy without giving it, and a highly reliable bump can be formed even on a minute IC3. |