http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003142610-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 2001-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93c540d308876da2d06524ec1a32d54f |
| publicationDate | 2003-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003142610-A |
| titleOfInvention | Nonvolatile semiconductor memory device and charge injection method thereof |
| abstract | [PROBLEMS] To efficiently inject high-energy charges from the entire surface of a region where a channel is formed even at a low voltage. A first semiconductor layer made of a first conductivity type semiconductor, a potential barrier layer in contact with one surface in a thickness direction of the first semiconductor layer, and a first semiconductor layer with the potential barrier layer interposed therebetween. A second semiconductor layer SUB facing the second semiconductor layer, and a plurality of dielectric films laminated on the other surface of the first semiconductor layer opposite to the second semiconductor layer, the gate dielectric including a charge storage means therein. A film GD, a gate electrode WL opposed to the first semiconductor layer via the gate dielectric film, and two sources formed on a part of the first semiconductor layer on both sides of the gate electrode and made of a second conductivity type semiconductor -It has drain regions BL and SL. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004349311-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007534161-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4480955-B2 |
| priorityDate | 2001-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.