| abstract |
[PROBLEMS] To reliably obtain an evaluation result when evaluating a crystal state of a polysilicon film formed by a low-temperature polycrystallization process. SOLUTION: An amorphous silicon film 6a is formed on a substrate 2. After the film formation, a cleaning step of cleaning the substrate 2 is performed. Specifically, a pretreatment for forming the surface oxide layer 6s on the amorphous silicon film 6a with a solution containing ozone and a post-treatment for removing the surface oxide layer 6s with a solution containing hydrofluoric acid are performed. Thereafter, an oxide film 6t is formed on the surface of the cleaned amorphous silicon film 6a. Thereafter, the amorphous silicon film 6a is subjected to a laser annealing process to generate a polysilicon film 6 serving as a channel layer of the thin film transistor. At this time, the linearity and / or periodicity of the spatial structure on the surface of the polysilicon film 6 is detected, and the state of the polysilicon film 6 is evaluated based on the detection result of the linearity and / or periodicity. |