http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003133375-A

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filingDate 2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59af9f163860351d1ca549dbf004f54b
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publicationDate 2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003133375-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract (57) Abstract: In an electrical characteristic inspection of a semiconductor device, for example, an efficient inspection step of contacting a probe with an electrode pad formed at a narrow pitch of an inspection semiconductor element with high reliability is provided. Provided are a method for manufacturing a semiconductor device and a semiconductor device capable of efficiently manufacturing a semiconductor device. A method for manufacturing a semiconductor device, comprising: a forming step of forming a semiconductor element on a semiconductor wafer; and an inspecting step of inspecting electrical performance of the formed semiconductor element. The inspection step includes a step of electrically connecting the inspection device to an electrode pad formed on the semiconductor device to be inspected, and forming a probe including a plurality of beams having probes electrically connected to the electrode pad. A first beam having a probe electrically connected to at least one of the electrode pads, and a number greater than the number of electrode pads electrically connected to the first beam. And a second beam having a number of probes that can be electrically connected to the electrode pad.
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Total number of triples: 23.