http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003133308-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_005146ca04ff8413cedbc7f799fcfe74 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfb21c8947f8df8bfe0e59c7e7c235b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d99b26dd87cff4d674b8abad0e47af3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fb66cc9c8e90fb63330b1a87b90fd75 |
| publicationDate | 2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003133308-A |
| titleOfInvention | Method for manufacturing oxide film of silicon carbide, apparatus for manufacturing oxide film, and method for manufacturing semiconductor element using oxide film |
| abstract | (57) Abstract: An object of the present invention is to provide an oxide film manufacturing method and apparatus capable of efficiently forming an oxide film on a silicon carbide substrate by anodic oxidation. Anodizing is performed while irradiating a silicon carbide substrate with light in a wavelength region having energy larger than the band gap of silicon carbide. Thus, a thick oxide film can be formed in a short time. Further, unlike the thermal oxidation method, since the treatment can be performed at room temperature, the oxide film can be easily formed, and the quality of the inner layer portion of the silicon carbide substrate where the oxide film is not formed can be maintained. Further, the method of manufacturing an oxide film according to the present invention includes the steps of: By applying the present invention to sacrificial oxidation, formation of an element isolation film, and formation of a gate oxide film, a high-quality semiconductor element can be efficiently manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008130709-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4567503-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008034483-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005311352-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005093808-A1 |
| priorityDate | 2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.