http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003107668-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_335d6074dd16be6a1f0137a3d11ef1a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2269dbe820405cdb16bda603baee73a8 |
| publicationDate | 2003-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003107668-A |
| titleOfInvention | Photomask, method of manufacturing the same, and method of forming magnetization pattern |
| abstract | (57) [Problem] To provide a photomask on which a mask pattern is formed with high accuracy. SOLUTION: A step of forming a photoresist layer 13 on a transparent substrate body 10 having an energy ray blocking material layer 12 before an etching process, and irradiating the photoresist layer 13 with an energy ray to form a latent image pattern 13a. , 1 3b, forming a resist pattern 13A and a diffraction slit 13B by developing, a step of etching the energy ray blocking material layer 12, A and a step of removing the diffraction slit 13B. A diffraction slit 13 </ b> B is arranged in a monitoring area on the outer peripheral edge of the energy ray blocking material layer 12. The laser beam 21 is applied to the diffraction slit 1 from below the transparent substrate body 10. Irradiate 3B and supply the etching liquid while detecting the amount of transmitted light, and stop the etching when the amount of light or the like reaches a predetermined value. |
| priorityDate | 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.