http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003101125-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
filingDate | 2002-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa51df5823fda7b17e6c951bf249dc1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fc7102941d9789956b730205f6473c4 |
publicationDate | 2003-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2003101125-A |
titleOfInvention | Waveguide type optical device |
abstract | (57) [PROBLEMS] To enable high-speed response in a waveguide-type optical device having a pn current blocking layer by reducing leakage current and device capacitance. SOLUTION: On a semiconductor substrate 1 made of InP or the like, a semiconductor laser region (LD region) 100a having a striped optical waveguide structure and an EA type optical modulator region (EA region) 100b sandwich an isolation region 100c. It is formed with. On both sides of the optical waveguide structure, ap − type semiconductor layer 23 made of InP doped with Zn at a low concentration, A p + -type semiconductor layer 25 made of InP doped with Zn at a high concentration and an n-type semiconductor layer 27 made of InP doped with Si are sequentially laminated and buried to form a current confinement region. Further, a trench 32 is formed in the current confinement region so as to reach the semiconductor substrate 1. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006108692-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7255977-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010271667-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019071402-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101842393-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011249767-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109638638-A |
priorityDate | 2001-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.