| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea7b8a3284626c3bd8cbd870849003d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d6ce2fba49033a8b333e1f4f17084b8 |
| publicationDate |
2003-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003100915-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
[PROBLEMS] To provide a semiconductor device including a MONOS type nonvolatile memory device and a method of manufacturing the same. A semiconductor device according to the present invention includes a memory cell (10). Contains 0. The memory cell 100 includes a word gate 1 formed on a semiconductor substrate 10 with a first gate insulating layer 12 interposed therebetween. 4, impurity layers 16 and 18, and first and second control gates 20 and 30 having a sidewall shape. A pair of first and second control gates adjacent via the impurity layers 16 and 18 are connected to the common contact part 200. The common contact part 200 includes a first contact conductive layer 214, a second contact conductive layer 232, and a pad-shaped third contact conductive layer 260. Third contact conductive layer 260 is provided on first contact conductive layer 214 and second contact conductive layer 232. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006049737-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011171755-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007281506-A |
| priorityDate |
2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |