http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003100676-A

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filingDate 2001-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_545ab069a1d0b17807b024864a9ba908
publicationDate 2003-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003100676-A
titleOfInvention Polishing composition
abstract [PROBLEMS] To polish a semiconductor device having a copper film and a tantalum compound, when the polishing selectivity of copper and the tantalum compound is not sufficient, or when the selectivity to copper is increased, the copper film of wiring trenches and holes is formed. There are problems such as excessive shaving and impairment of the smoothness of the copper film surface, and a polishing composition with these problems improved is provided. A polishing composition comprising an abrasive, 1-hydroxybenzotriazole, malic acid, hydrogen peroxide, polyvinyl alcohol and water, wherein the abrasive is fumed silica, colloidal silica, fumed alumina, A polishing composition comprising at least one kind of colloidal alumina and having a primary particle of an abrasive of 0.01 to 0.2 μm.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005109257-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4541674-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008147444-A
priorityDate 2001-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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