http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003100632-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 |
| filingDate | 2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b24fb6b9e00975259a2ed489d3fb3020 |
| publicationDate | 2003-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003100632-A |
| titleOfInvention | Semiconductor device manufacturing method and manufacturing apparatus, and semiconductor device |
| abstract | (57) [Summary] [PROBLEMS] To form a CGS film without domain boundaries. SOLUTION: After adding a Ni element 13 as a catalytic metal element onto an α-Si film 12, when performing heat treatment in a nitrogen atmosphere to perform solid-phase crystallization, the solid state crystallization proceeds from the center of the substrate outward. The temperature range from 550 ° C. to 600 ° C. is sequentially expanded. By doing so, one CGS can be used for the entire substrate. CGS with no domain boundaries grown on domain A film 14 can be formed. The CGS film 14 thus formed Is used as a channel region, a thin film transistor or a CMOS transistor having small variations in electrical characteristics without including a CGS domain boundary in the channel region can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101894867-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009135488-A |
| priorityDate | 2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.