http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003094398-A

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filingDate 2002-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f38f5ddfc5d311e822121dbe8ed36774
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publicationDate 2003-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003094398-A
titleOfInvention Method of manufacturing ARS system
abstract (57) Abstract: A method of manufacturing an ARS system that suppresses damage, overcomes the problem of thermal limitation, and improves the yield. According to the present invention, a protective layer and a conductor electrode are deposited on a medium side of a rotor wafer before processing of another element. The RS storage medium secures a surface for subsequent wafer thinning. The CMOS circuit is also formed on the stator wafer at a subsequent stage and is hardly affected by the heat treatment. The processing of the rotor wafer can also be performed with mild thermal restrictions. Since the wafer bonding between the rotor wafer and the starter wafer is also performed in a subsequent process, deterioration of the wafer bonding can be minimized. Therefore, the yield is improved, and the manufacturing cost can be reduced.
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