| abstract |
(57) Abstract: An object of the present invention is to improve the adhesion between a dielectric film and an electrode formed on a nitride semiconductor and prevent their separation. The present invention relates to a nitride semiconductor device including a nitride semiconductor layer, an electrode, and a dielectric film, wherein the nitride semiconductor element is in contact with the nitride semiconductor layer and the dielectric film and is selected from As, P, or Sb. InG containing at least one element X The provision of the aNX contact layer makes it possible to prevent the dielectric film from peeling off. Further, the InGa By forming an electrode in contact with the NX contact layer, electrode separation can be prevented. |