http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003081673-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-457
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
filingDate 2001-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8812e5b34498a4898f62713f3721d5c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b46642106dae2f664ffea897541155b
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publicationDate 2003-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003081673-A
titleOfInvention Method for producing sintered indium-tin oxide
abstract (57) [Problem] To provide a method capable of manufacturing a large-sized ITO sintered body useful as a sputtering target for producing a transparent conductive film in a short time. A mixture of a compound containing indium and oxygen and a compound containing tin and oxygen, or indium, A method for producing an indium-tin oxide sintered body, characterized in that a compound containing tin and oxygen is used as a raw material, and a DC pulse current is applied under pressure to conduct sintering.
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priorityDate 2001-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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