http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003078018-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
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filingDate 2001-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1589d983933156ea42bbd8b7f8173d24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef075ed1b230442e476bc17c3a17649b
publicationDate 2003-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003078018-A
titleOfInvention Semiconductor device
abstract (57) Abstract: A semiconductor device capable of recovering from deterioration of transistor characteristics due to NBTI or the like is provided. A monitor circuit monitors a characteristic of a transistor to which a predetermined voltage is applied to a gate electrode, a temperature increasing circuit increasing a temperature of the transistor, and a characteristic of the transistor monitored by the monitor circuit. A control circuit for operating the temperature raising circuit when the deterioration of the transistor characteristics is equal to or more than a predetermined threshold value.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012056574-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014509786-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5408362-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011041280-A
priorityDate 2001-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 24.