| abstract |
[PROBLEMS] To provide a method for manufacturing a GaN-based group III-V compound semiconductor having a low dislocation density using ELO by HVPE. SOLUTION: A second group III-V compound semiconductor layer 5 having a flat surface is formed on a first group III-V compound semiconductor layer 3 on which a mask layer 4 is formed by a regrowth method by HVPE. In the method for producing a GaN-based group III-V compound semiconductor, at least $ 33- Controlling the formation of facets, including 62 ° facets, Regrowth is performed until the plane parallel to the first group III-V compound semiconductor layer 3 disappears to manufacture a group III-V compound semiconductor having a low dislocation density. |