| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2226 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 |
| filingDate |
2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36a6afd0645cce9d2a7d77008e90935c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59e6c43d943b97de56fe521052a44fa5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_014140560b16f8014d8065b7575a7a62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffe37c036b764f05b62ddf619486eec8 |
| publicationDate |
2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003060310-A |
| titleOfInvention |
Semiconductor optical device and method of manufacturing the same |
| abstract |
(57) Abstract: Provided is a semiconductor optical device having a structure capable of controlling diffusion of a p-type impurity into a semi-insulating buried layer, and a method for manufacturing the same. SOLUTION: On a semiconductor substrate 1, a laminate comprising at least a first conductive type clad layer 2, an active region formed of an active layer 4 or a light absorbing layer, and a second conductive clad layer 6 is formed as a mesa stripe. In a buried semiconductor optical device in which both sides of the laminated body are buried with semi-insulating semiconductor crystals 9 and 10, the semi-insulating semiconductor crystals 9 and 10 are formed of the second conductivity type impurity. A layer 9 containing a semi-insulating impurity for promoting diffusion and a layer 10 containing a semi-insulating impurity for suppressing diffusion of the second conductivity type impurity are provided in this order. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011181789-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011249767-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772023-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7408965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005064512-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007299882-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008209863-A |
| priorityDate |
2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |