http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003060228-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
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filingDate 2001-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_523455cb6eaa951dc5a23b1ae8c9387a
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publicationDate 2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003060228-A
titleOfInvention Semiconductor light emitting device and method of manufacturing the same
abstract (57) [Problem] It is difficult to reduce the cost of a semiconductor light emitting device having low power consumption and low operating voltage. A on the substrate 11 made of low-resistance silicon Al x an In x first layer 12a made of Ga 1-xy N and A The l a In b Ga iab second layer 12b and the composite layer structure buffer layer 12 was stacked alternately consisting of N provided. An n-type semiconductor layer 13 made of gallium nitride and an active layer 1 made of gallium indium nitride on a buffer layer 12 4. A p-type semiconductor layer 15 made of gallium nitride is sequentially formed. An anode electrode 17 is provided on the p-type semiconductor layer 15, and a cathode electrode 18 is provided on the substrate 11.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005158846-A
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