| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 |
| filingDate |
2001-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaef84cbe0e0b3b1b7b8dfada321b1a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ffcf7c2775e2cc32feff8de08b66afc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_634c4c77a7a6d5de6b47478dadcd9693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d140ffea041eb70bb9bc9b1434147d4 |
| publicationDate |
2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003060167-A |
| titleOfInvention |
Ferroelectric memory and method of manufacturing the same |
| abstract |
(57) Abstract: Provided is a ferroelectric memory in which a chemical reaction between a silicon substrate and a ferroelectric is suppressed. SOLUTION: A silicon substrate, a silicon oxynitride film having a thickness of 0.5 to 4 nm formed on the silicon substrate, A ferroelectric memory comprising: a thin film of a Bi-based perovskite ferroelectric or a Pb-based perovskite ferroelectric formed on the silicon oxynitride film; and an electrode formed on the ferroelectric thin film. . |
| priorityDate |
2001-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |