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filingDate 2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_534bda79dfd013382281e533ee1cba83
publicationDate 2003-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003054934-A
titleOfInvention Porous silicon oxide thin film and method for producing the same
abstract [PROBLEMS] To provide a silicon oxide thin film having a porous structure of a molecular order without heating by a conventional method. In order to develop applications expected from the morphology, the configuration of a silicon oxide thin film with a controlled porous structure was an issue. [Means for Solving the Problems] After forming a copolymer thin film by plasma polymerization of a mixed gas of a silicon-based monomer and a hydrocarbon-based monomer in a fixed ratio, the copolymer thin film is further used as a plasma source with oxygen or an oxygen-containing gas. A porous silicon oxide thin film obtained by performing treatment by electric discharge, etching away a polymer component derived from a hydrocarbon monomer, and simultaneously oxidizing a silicon polymer portion to convert it to silicon oxide.
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