| abstract |
PROBLEM TO BE SOLVED: To newly propose a channel structure suitable for high-efficiency source side injection, and to provide a nonvolatile semiconductor memory device using the same and a charge injection method. SOLUTION: Channel forming regions CH1, CH2a, C H2b, two source / drain regions S / D of the first conductivity type semiconductor sandwiching the channel formation region, and a gate electrode MGa formed on the channel formation region with a stacked film GD having charge storage capability interposed therebetween. , MGb. A channel formation region made of a second conductivity type semiconductor; Inversion layer forming region (C) where a channel is formed by the inversion layer. H1), and storage layer formation regions ACLa and ACLb made of the first conductivity type semiconductor and formed with a channel by the majority carrier storage layer. When writing to the storage unit 1, the storage layer formation area ACLa , The concentration of the horizontal electric field Ex was improved, and the charge injection efficiency was improved. |