http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003051455-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate | 2001-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b99e96b66a8a5deb2de5adde4abcf88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e25bd422c35e1653e979892c57bc6fe |
| publicationDate | 2003-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003051455-A |
| titleOfInvention | Method for growing compound semiconductor crystal |
| abstract | (57) [Problem] To provide a method for growing a compound semiconductor crystal having high electron mobility. SOLUTION: The compound semiconductor crystal growth method according to the present invention supplies a group III organic metal source gas, a group V source gas, a doping source gas, and a diluting gas into a reaction furnace, and is disposed in the reaction furnace. When the source gases are thermally decomposed in the vicinity of the heated semiconductor substrate 1 and the epitaxial layers 2 to 6 of the compound semiconductor crystals are grown on the surface of the semiconductor substrate 1, a reaction occurs before the epitaxial growth of the layers 2 to 6 starts. An organic metal source gas at room temperature is supplied into the furnace, and impurities in the reaction furnace are removed by a gettering action of the organic metal source gas, and then the layers 2 to 6 are epitaxially grown. |
| priorityDate | 2001-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.