http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003046066-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate | 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49bc658ca3574dc81a52bf80fc6b043a |
| publicationDate | 2003-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003046066-A |
| titleOfInvention | Ferroelectric nonvolatile semiconductor memory and semiconductor device |
| abstract | (57) Abstract: Provided is a ferroelectric nonvolatile semiconductor memory having a multi-stack structure and having a structure in which a top surface of a connection hole is unlikely to be damaged. A ferroelectric-type nonvolatile semiconductor memory, on the insulating layer 16 provided on the semiconductor substrate 10 where the transistor TR 1 is formed, the first electrode 21 or 31 and the ferroelectric layer 23, 33 And a second electrode 24, 34 having a structure in which memory cells are stacked with an interlayer insulating layer 26 interposed therebetween. Is formed, and the top surface of the connection hole 17 formed in the insulating layer 16 has the first conductor layer 22 formed simultaneously with the first electrode 21 constituting the first layer memory cell, and It is covered with a laminated structure of a second conductor layer 25 formed simultaneously with the second electrode 24 forming the first layer memory cell. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184452-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335644-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102282786-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200027046-A |
| priorityDate | 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.