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filingDate 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003045878-A
titleOfInvention Semiconductor element wiring forming method
abstract PROBLEM TO BE SOLVED: To provide a method for forming a wiring of a semiconductor element capable of facilitating (111) crystal growth of a Cu wiring, improving electromigration characteristics of the Cu wiring, and improving reliability of the Cu wiring. I do. SOLUTION: A step of patterning an interlayer insulating film on a substrate to form a trench, a step of forming a barrier metal film on the trench and the interlayer insulating film, and a step of forming a seed Cu film on the barrier metal film , The seed C forming a PVD metal film on the u film by PVD, Depositing an electroplating metal film on the PVD metal film so as to fill the trench, and forming a metal wiring so that the interlayer insulating film is exposed and remains only in the trench. .
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Total number of triples: 25.