| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f86296641d508c4f463964ddf01c79e6 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2001-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a10161d149c37b51f5c782309f2a1100 |
| publicationDate |
2003-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003037265-A |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
(57) Abstract: To prevent impurity ions containing fluorine from being implanted into a film containing tungsten without increasing the number of manufacturing steps. SOLUTION: The thickness H2 'of an oxide film 6 is set so that BF 2 + ions can be prevented from reaching the tungsten silicide film 4 when ion implantation IP2 of BF 2 + ions is performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010028004-A |
| priorityDate |
2001-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |