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filingDate 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2591503fbc6ea7e42c35672236967302
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publicationDate 2003-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003002800-A
titleOfInvention Method for synthesizing 3C-SiC nanowhisker and 3C-SiC nanowhisker
abstract PROBLEM TO BE SOLVED: To provide a safe and low-cost 3C-SiC nanowhisker synthesis method that can control the diameter and length, can be grown on a Si substrate, and is low in cost. In addition, 3C-SiC nanowhiskers having different emission wavelengths of visible light are provided. SOLUTION: A thin film 2 made of a metal element on a Si substrate 1 Is formed, and the substrate 1 is formed by holding the substrate 1 in a plasma composed of hydrogen and hydrocarbons at a predetermined substrate temperature for a certain period of time. The Si of the Si substrate 1 and C in the plasma dissolve into the metal liquid particles 3 in supersaturation, and 3C-SiC nanowhiskers 4 grow on the metal liquid particles 3, and the surface of the whiskers is terminated with H to keep the diameter constant. Then, the metal liquid particles 3 at the root of the whiskers take in the Si of the Si substrate 1 and sink into the Si substrate 1.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4674366-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4836805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007523033-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008260297-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010241666-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010520619-A
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