| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2000-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002543610-A |
| titleOfInvention |
Removal method of SiC |
| abstract |
(57) The present invention relates to a method for removing at least an exposed portion of a carbide silicon layer formed on a substrate, the method comprising: exposing the carbide silicon layer to an oxygen-containing plasma; Converting at least the exposed portions to a silicon oxide layer and removing the silicon oxide layer from the substrate. The invention relates to an integrated circuit implementing the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009194216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4698813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002134494-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001068451-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004228584-A |
| priorityDate |
1999-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |