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filingDate 2000-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2002-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002535838-A
titleOfInvention Ferroelectric memory having ferroelectric thin film and manufacturing method
abstract (57) Abstract: A coating of a liquid precursor comprising a metal is applied to a first electrode (122) and fired on a hot plate in an oxygen atmosphere at a temperature not exceeding 300 ° C for 5 minutes, followed by: RTP anneal at 675 ° C. for 30 seconds. Subsequently, the coating is annealed at 700 ° C. for 1 hour in an oxygen or nitrogen atmosphere to form a layered superlattice material thin film (124) having a thickness not exceeding 90 nm. A second electrode (126) is provided to form the capacitor (128), and the post anneal is performed in an oxygen or nitrogen atmosphere at a temperature not exceeding 700 ° C. If the material is strontium bismuth tantalate, the precursor will include u molar equivalents of strontium, v molar equivalents of bismuth, and w molar equivalents of tantalum. Here, 0.8 ≦ u ≦ 1.0, 2.0 ≦ v ≦ 2.3, and 1.9 ≦ w ≦ 2.1.
priorityDate 1999-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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