http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002530862-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 1999-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002530862-A |
| titleOfInvention | Inert gas recovery annealing of hydrogen damaged ferroelectric films |
| abstract | (57) Abstract: A nonvolatile integrated circuit memory including a ferroelectric layered superlattice material thin film (100, 200, 300, 601) is formed. The inert gas recovery annealing (434) is performed to eliminate the deterioration of ferroelectric characteristics caused by hydrogen. The inert gas annealing is performed in a temperature range of 300 ° C. to 1000 ° C. for a time of 1 minute to 2 hours. The layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate. The integrated circuit manufacturing process includes a forming gas anneal (432), wherein the inert gas recovery anneal is performed after the forming gas anneal at or near the same temperature as the forming gas anneal for the same time. The inert gas recovery anneal eliminates the need for oxygen recovery annealing and allows for a hydrogen rich plasma process and forming gas anneal without risk of damage to the ferroelectric thin film. The inert gas atmosphere may include a pure inert gas or a mixture of inert gases. |
| priorityDate | 1998-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.