http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002529932-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate | 1999-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002529932-A |
| titleOfInvention | Tungsten chemical mechanical polishing method using fixed polishing pad and tungsten layer chemical mechanical polishing solution for chemical mechanical polishing using fixed polishing pad |
| abstract | The present invention relates to a tungsten chemical mechanical polishing method using a fixed polishing pad, and a tungsten layer chemical mechanical polishing solution particularly suitable for chemical mechanical polishing using a fixed polishing pad. In one embodiment, a semiconductor wafer is provided having a tungsten-containing layer present at or above 50 mol%. Such a wafer is located near a fixed chemical mechanical polishing pad. A tungsten layer chemical mechanical polishing solution is provided between the wafer and the pad. The tungsten layer chemical mechanical polishing solution has a tungsten oxide component present at about 0.5% to 15% by volume and a pH value equal to or less than 6.0. The tungsten-containing layer is chemically mechanically polished by a stationary polishing pad with a tungsten chemical mechanical polishing solution received between the wafer and the pad. In one embodiment, the tungsten from the layer is oxidized by a solution having a tungsten oxidation component present at 0.5% to 15% by volume and a pH equal to or less than 6.0. One or both of tungsten and tungsten oxide are then polished from the tungsten-containing layer by a fixed chemical mechanical polishing pad. In one embodiment, the invention includes a tungsten layer chemical mechanical polishing solution. |
| priorityDate | 1998-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.