| abstract |
(57) Abstract: A semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an aluminum-gallium nitride active structure on the gallium nitride layer, A high electron mobility transistor (HEMT) is disclosed that includes a passivation layer on a gallium active structure and source, drain and gate contacts to the aluminum gallium nitride active structure. |