| abstract |
(57) Abstract: To enhance the connection of the circuit device, a pressure contact (D) is arranged in a conductive region of the circuit device. The pressure contact comprises a metal, for example copper, and has a substantially flat upper surface above the passivation layer (S), and preferably has a substantially vertical side surface. Using a mask (P) that does not cover the area of the conductive area to be contacted, metal is deposited by an electroplating process using current, thereby creating a pressure contact (D). The process is terminated when the upper surface of the pressure contact (D) is below the upper surface of the mask (P). For the application of a voltage to the electroplating process and as a basis for crystallization, a conductive layer (L) containing, for example, copper can be applied to the conductive region. |