| abstract |
(57) [Summary]nIn the present invention, a synthetic semiconductor structure comprising a metal layer (tungsten, aluminum, copper, etc.), a barrier layer (tantalum, tantalum nitride, titanium or titanium nitride) and an insulating layer (silicon dioxide group, etc.) is polished. And compositions for the same. The composition provides an aqueous medium, an abrasive, an oxidizing agent, and a thinner oxide layer having a plurality of functional groups having a degree of polymerization of at least 5 and having an affinity for surface groups contained on the silicon dioxide surface. Consist of organic polymers that suppress. The composition may optionally contain a complexing agent and / or a dispersing agent. |