http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002503768-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C55-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 1999-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002503768-A |
| titleOfInvention | A-site and / or B-site modified PbZrTiO3 material and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta) O3 film useful in ferroelectric random access memory and high performance thin film microactuator |
| abstract | (57) [Summary] (i) an A-site substituent consisting of Sr, Ca, Ba and Mg, and (ii) a substituent selected from the group consisting of a B-site substituent selected from the group consisting of Nb and Ta A modified PbZrTiO 3 perovskite crystal material thin film (16) in which a PbZrTiO 3 perovskite crystal material contains a crystal lattice A site and a B site at least one of which is modified by the presence of Perovskite crystalline thin film materials can be formed by liquid delivery MOCVD from organometallic precursors of the metal components of the thin film, forming PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the present invention can be used in non-volatile ferroelectric storage devices (NV-FeRAM) and as microelectrochemical systems as sensor and / or actuator elements, eg, high speed digital actuators (10) requiring low input levels. (MEMS). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4564580-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010103546-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7562968-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010080813-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8354777-B2 |
| priorityDate | 1998-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.